Gating effects in antiferromagnetic CuMnAs
Source abstract
Abstract
Antiferromagnets (AFs) attract much attention due to their potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control the properties and the Néel vector direction of AFs. Among AFs, CuMnAs has been shown to exhibit specific properties that result in the existence of the current-induced spin-orbit torques commensurate with spin directions and topological Dirac quasiparticles. Here, we report on the observation of a reversible effect of an electric field on the resistivity of CuMnAs thin films, employing an ionic liquid as a gate insulator. The data allow us to determine the carrier type, concentration, and mobility independent of the Hall effect that may be affected by an anomalous component.
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Research context
OpenAlex topics: Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences 1 , Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
Institute of Physics, Polish Academy of Sciences 2 , Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
School of Physics and Astronomy, University of Nottingham 3 , Nottingham NG7 2RD, United Kingdom
WPI-Advanced Institute for Materials Research, Tohoku University 4 , Sendai 980-8577, Japan
Funding
National Science Centre, Poland · Foundation for Polish Science
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