Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates
Source abstract
Abstract
This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been demonstrated from InAs/In0.53Ga0.47As triangular quantum wells and InAs quantum wells on the templates, respectively. The surface root mean square roughness is 4-5 nm. The quantum wells act fully strained and the threading dislocation density is 107-108 cm-2 in the upper side of buffer.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050, China
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 2 , Shanghai 200083, China
University of Chinese Academy of Sciences 3 , Beijing 100049, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China
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