journal article·2018-08-01Open access

Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity

F. Liang, Jing Yang, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, Mo Li, Y. T. Zhang, G. T. Du

AIP Advances· Volume 8· Issue 8

Abstract

Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the basis of the dependence of resistivity on C concentration and the photoluminescence analysis, it is found that C impurities act as donors in p-Al0.09Ga0.91N layer, and reducing the C concentration can reduce its compensation effect on Mg acceptor. Finally, a low resistivity of 4.2 Ω·cm is achieved for the low temperature grown p-Al0.09Ga0.91N.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science 1 , Beijing 100083, China

University of Chinese Academy of Sciences 2 , Beijing 100049, China

Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences 3 , Suzhou 215123, China

Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics 4 , Chengdu 610200, China

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 5 , Changchun 130023, China

Funding

National key R&D Program of China · Science Challenge Project · National Natural Science Foundation of China

References (30)

Show source-provided references
1. J. Semicond. · 2017 · 3810.1088/1674-4926/38/5/051001 ↗
2. J. Semicond. · 2016 · 37 · 11100110.1088/1674-4926/37/11/111001 ↗
3. J. Semicond. · 2018 · 39 · 04400210.1088/1674-4926/39/4/044002 ↗
4. J. Semicond. · 2016 · 37 · 02400110.1088/1674-4926/37/2/024001 ↗
5. SPIE · 2017 · 101230A · 123
6. J. Lightwave Technol. · 2012 · 30 · 67910.1109/jlt.2011.2176918 ↗
7. Phys Status Solidi B · 2011 · 248 · 5210.1002/pssb.201083980 ↗
8. J Cryst Growth · 2010 · 312 · 181710.1016/j.jcrysgro.2010.03.008 ↗
9. Appl. Phys. Lett. · 2013 · 103 · 15210910.1063/1.4824850 ↗
10. J. Semicond. · 2016 · 37 · 04400610.1088/1674-4926/37/4/044006 ↗
11. Opt. Express · 2017 · 25 · 41510.1364/oe.25.000415 ↗
12. SPIE · 2017 · 244 · 102441X
13. Thin Solid Film · 2014 · 564 · 13510.1016/j.tsf.2014.05.045 ↗
14. Appl. Phys. Lett. · 2013 · 102 · 19350610.1063/1.4804600 ↗
15. J Electron Mater · 2000 · 29 · 1510.1007/s11664-000-0087-3 ↗
16. Vacuum · 2017 · 141 · 13910.1016/j.vacuum.2017.04.002 ↗
17. Phys Status Solidi C · 2016 · 13 · 24510.1002/pssc.201510186 ↗
18. MRS Proceedings · 2011 · 693 · I11.26.110.1557/proc-693-i11.26.1 ↗
19. J. Appl. Phys. · 2009 · 105 · 10310210.1063/1.3126487 ↗
20. J. Vac. Sci. Technol. B · 2014 · 32 · 05120710.1116/1.4892786 ↗
21. Appl. Phys. Lett. · 2010 · 97 · 15210810.1063/1.3492841 ↗
22. Appl. Phys. Lett. · 2012 · 100 · 14211010.1063/1.3699009 ↗
23. Phys. Rev. B · 2014 · 90 · 23520310.1103/physrevb.90.235203 ↗
24. Phys. Rev. Lett. · 2013 · 110 · 08740410.1103/physrevlett.110.087404 ↗
25. J. Appl. Phys. · 2014 · 115 · 16370410.1063/1.4873957 ↗
26. Acta Phys. Sin-Ch Ed · 2013 · 62 · 20680110.7498/aps.62.206801 ↗
27. Chin. Phys. B · 2016 · 25 · 02710210.1088/1674-1056/25/2/027102 ↗
28. J. Electron. Mater. · 2014 · 43 · 124410.1007/s11664-014-3005-9 ↗
30. Phys. Rev. Lett. · 2012 · 108 · 15640310.1103/physrevlett.108.156403 ↗