Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
Source abstract
Abstract
The uniaxial strain-induced electronic structure variations in intrinsic and Al doped (3C-, 4H-) SiC are studied by using first-principle calculations. The main findings are summarized as follows: (I) the tensile strain leads to a structural transformation in Al doped 3C-SiC, which is signed by the total energy and lattice characteristics; (II) the band gap Eg modulation with large reductions is achieved by applying strains up to 2% in all compounds; (III) The high-symmetry points of valence band maximum and conduction band minimum in intrinsic and Al doped 4H-SiC show the abnormal characteristic under strain, corresponding to the maximum Eg as the strain is ∼-1%. These results suggest that the strain approach could be used to tune the electronic structures of SiC compounds.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Boron and Carbon Nanomaterials Research · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology 1 , Mianyang 621010, People’s Republic of China
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 2 , Xian 710071, People’s Republic of China
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics 3 , Mianyang 621900, People’s Republic of China
Funding
Longshan academic talent research supporting program of SWUST
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