Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes
Source abstract
Abstract
We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.
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Research context
OpenAlex topics: Surface and Thin Film Phenomena · Magnetic Field Sensors Techniques · Non-Destructive Testing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
DTU Nanotech - Department of Micro- and Nanotechnology, Technical University of Denmark 1 , Building 345 East, DK-2800 Kongens Lyngby, Denmark
CAPRES A/S, Scion-DTU 2 , Building 373, DK-2800 Kongens Lyngby, Denmark
Imec 3 , Kapeldreef 75, 3001 Leuven, Belgium
KU Leuven, Department of Physics and Astronomy 4 , Celestijnenlaan 200d, 3001 Leuven, Belgium
Funding
Innovation Fund Denmark · H2020 LEIT Information and Communication Technologies
References (20)
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