Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
Abstract
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor materials and interfaces
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Affiliations
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050, China
Department of Electrical Engineering, University of California 2 , Los Angeles, CA 90095, U.S.A.
Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 3 , Shanghai 200083, China
Funding
National key research and development program of china · Open program of key laboratory of infrared imaging materials and detectors · Shanghai sailing program · National Natural Science Foundation of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences