Highly efficient and controllable method to fabricate ultrafine metallic nanostructures
Source abstract
Abstract
We report a highly efficient, controllable and scalable method to fabricate various ultrafine metallic nanostructures in this paper. The method starts with the negative poly-methyl-methacrylate (PMMA) resist pattern with line-width superior to 20 nm, which is obtained from overexposing of the conventionally positive PMMA under a low energy electron beam. The pattern is further shrunk to sub-10 nm line-width through reactive ion etching. Using the patter as a mask, we can fabricate various ultrafine metallic nanostructures with the line-width even less than 10 nm. This ion tailored mask lithography (ITML) method enriches the top-down fabrication strategy and provides potential opportunity for studying quantum effects in a variety of materials.
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Research context
OpenAlex topics: Advancements in Photolithography Techniques · Nanofabrication and Lithography Techniques · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Science & Technology of China 1 Hefei National Laboratory for Physical Sciences at the Microscale, , Hefei 230026, China
Anhui University 2 Physics school, , Hefei Anhui 230601 China
University of Science & Technology of China 3 National Synchrotron Radiation Laboratory, , Hefei 230027, China
Funding
National Natural Science Foundation of China · Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China
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