Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor

We have grown conductive aluminum nitride (AlN) layers using the spontaneous via holes formation technique on an n+-Si substrate for vertical-type device fabrication. The size and density of the via holes are controlled through the crystal growth conditions used for the layer, and this enables the conductance of the layer to be controlled. Using this technique, we demonstrate the fabrication of a vertical-type deep ultraviolet (DUV) photo-sensor. This technique opens up the possibility of fabrication of monolithically integrated on-chip DUV sensors and DUV light-emitting devices (LEDs), including amplifiers, controllers and other necessary functional circuits, on a Si substrate.