Optimal condition of memristance enhancement circuit using external voltage source
Source abstract
Abstract
Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Neural dynamics and brain function
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Affiliations
Toyota Central Research & Development Labs. , Nagakute, Aichi 480 1192, Japan
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