journal article·2021-01-01Open access

MgO template effect for perpendicular magnetic anisotropy in (001)-textured poly-crystalline MnAlGe films

Takahide Kubota, Keita Ito, Rie Y. Umetsu, Masaki Mizuguchi, Koki Takanashi

AIP Advances· Volume 11· Issue 1

Abstract

Magnetic thin films showing high perpendicular magnetic anisotropy, Ku, and low saturation magnetization, Ms, are essential for realizing a small switching current in spintronic devices utilizing the current induced magnetization switching phenomena. The Cu2Sb-type MnAlGe intermetallic compound is a material showing uniaxial magnetocrystalline anisotropy with a relatively low Ms, which is attractive for spintronic application. In this study, the layer thickness dependence of Ku was investigated in poly-crystalline MnAlGe films, and the MgO template effect is discussed to achieve perpendicularly magnetized films in a few-nanometer thickness range. Experimental results suggested that the (001)-texture for the perpendicular magnetization was promoted by the MgO(001) template through the solid-phase epitaxy growth by annealing, which is similar with that in conventionally used CoFeB|MgO layered samples. Ku of about 2 × 106 erg/cm3 was achieved in a 5 nm-thick MnAlGe film using MgO buffer and capping exhibiting a low Ms value of approximately 200 emu/cm3 at room temperature. Although the magnitude of Ku is still in a moderate range, the low Ms is a promising feature for spintronic application.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic Properties and Applications · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute for Materials Research, Tohoku University 1 , Sendai 980-8577, Japan

Center for Spintronics Research Network, Tohoku University 2 , Sendai 980-8577, Japan

Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University 3 , Sendai 980-8577, Japan

CREST, Japan Science and Technology Agency 4 , Kawaguchi 332-0012, Japan

Funding

The Murata Science Foundation · CRDAM-IMR, Tohoku University

References (15)

Show source-provided references
1. Solid-State Electronics · 2016 · 125 · 2510.1016/j.sse.2016.07.006 ↗
2. 2018 · 18.3.1
3. 2019 · 1
4. J. Magn. Magn. Mater. · 1996 · 159 · L110.1016/0304-8853(96)00062-5 ↗
5. Appl. Phys. Lett. · 2013 · 103 · 14240510.1063/1.4824031 ↗
6. Appl. Phys. Express · 2019 · 12 · 10300210.7567/1882-0786/ab3e2d ↗
7. AIP Advances · 2020 · 10 · 01512210.1063/1.5130388 ↗
8. Appl. Phys. Lett. · 2020 · 116 · 06240210.1063/1.5140398 ↗
9. Nature Materials · 2010 · 9 · 72110.1038/nmat2804 ↗
10. J. Appl. Phys. · 1971 · 42 · 170410.1063/1.1660401 ↗
11. J. Appl. Phys. · 1973 · 44 · 178910.1063/1.1662449 ↗
12. J. Appl. Phys. · 1973 · 44 · 175610.1063/1.1662443 ↗
13. Appl. Phys. Lett. · 2005 · 87 · 24250310.1063/1.2140612 ↗
14. Appl. Phys. Lett. · 2009 · 94 · 12250110.1063/1.3106624 ↗
15. J. Magn. Magn. Mater. · 1980 · 15-18 · 110310.1016/0304-8853(80)90904-x ↗