journal article·2019-07-01Open access

Publisher’s Note: “Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC” [AIP Advances 9, 055308 (2019)]

J. Weiße, M. Hauck, M. Krieger, A. J. Bauer, T. Erlbacher

AIP Advances· Volume 9· Issue 7

Abstract

Art.079901, 2 S.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Aluminum Alloys Composites Properties · Advanced ceramic materials synthesis

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Affiliations

Chair of Electron Devices, Friedrich-Alexander University Erlangen-Nürnberg (FAU) 1 , Cauerstrasse 6, 91058 Erlangen, Germany

Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) 2 , Staudtstrasse 7, 91058 Erlangen, Germany

Fraunhofer Institute of Integrated Systems and Device Technology 3 , Schottkystrasse 10, 91058 Erlangen, Germany

References

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