journal article·2018-10-01Open access

Conduction band electron relaxation and spin relaxation dynamics in CdZnTe alloy

Lihua Teng, Lijun Mu, Xia Wang

AIP Advances· Volume 8· Issue 10

Abstract

Conduction band electron relaxation and spin relaxation dynamics in Cd0.96Zn0.04Te alloy are investigated using time-resolved pump-probe spectroscopy. The measured linearly polarization pump-probe spectroscopy demonstrates the presence of a fast process and a slow process, both of which indicate electron trapping and recombination at the defect/impurity level. The time constants of the fast process are within the range of 3.1 to 4.9 ps, and those of the slow process are within the range of 16.1 to 18.1 ps. During the ultrafast thermalization process in the first picosecond, an oscillating signal that results from the band gap renormalization (BGR) effect is found. The D’yakonov-Perel’ (DP) mechanism dominates the spin relaxation process, and the spin relaxation slows down with the incorporation of Zn, because of the decrease of spin-orbit splitting energy and enhancement of electron-impurity scattering.
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Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Optoelectronic Materials and Technologies Engineering Laboratory of Shandong, Department of Physics, Qingdao University of Science and Technology , Qingdao 266061, China

Funding

National Natural Science Foundation of China

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