Improved bilayer phosphorene TFET inverter performance by reduction of ambipolarity
Source abstract
Abstract
A comprehensive study on the degradation of inverter output voltage based on double-gated (DG) bilayer Phosphorene complementary tunnel-FETs is presented. This degradation occurs for supply voltage (VDD) larger than the bandgap value of the channel material. Simulated load-lines of n-TFET and p-TFET confirm that this degradation happens due to the high ambipolarity of homojunction DG tunnel-FETs. But ambipolarity can be suppressed effectively in both homojunction n-TFET and p-TFET using dual-material gate (DMG) structure. It is shown that by appropriately choosing the gate materials of DMG TFET, improved voltage transfer characteristics (VTC) can be obtained for DMG TFET based inverter.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology , Dhaka 1205, Bangladesh
References (21)
Show source-provided references
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