Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing

Due to the piezoelectricity, the density of 2DEG (NS) formed in the AlGaN/GaN heterostructure can be altered when it is deformed externally, which may be exploited to develop pressure sensors and to enhance the performance of power devices by stress engineering based on the heterostructure. In this paper, a 3D electro-mechanical simulation is presented to study how the induced strains and NS for the AlGaN/GaN wafer under bending exerted uniaxial stress are influenced by the edges caused by processing: the fabrication of the mesa used for isolation, the ohmic contact metal, the gate metal, and the passivation. Results show that the influences are dependent on distance between the edges, depth of the edges, and direction of the exerted uniaxial stress.