Periodic molybdenum disc array for light trapping in amorphous silicon layer
Source abstract
Abstract
We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shanghai University 1 International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, , 99 Shangda Road, Shanghai, 200444 China
Shanghai Advanced Research Institute, Chinese Academy of Sciences 2 , 99 Haike Road, Shanghai, 201210 China
Funding
Knowledge Innovation Project of the Chinese Academy of Sciences · National Natural Science Foundation of China
References (26)
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