Impact of compound doping on hole and electron balance in p-i-n organic light-emitting diodes
Source abstract
Abstract
The fluorescent and phosphorescent p-i-n organic light-emitting diodes (OLEDs) with well controllable compound doping have been systematically investigated, where MoO3 and LiF are the effective p-type and n-type dopants, respectively. For both the bulk and interfacial doping, the hole and electron balance in the devices is found to be strongly dependent on the doping configuration, which could either facilitate or compromise the device power efficiency. The impact of the compound doping on the charge balance is further confirmed by the change of the emission region with different doping configuration. The modulation of p-type and n-type doping densities and position is thus essential for optimizing hole and electron balance in p-i-n OLEDs.
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Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Soochow University 1 Institute of Functional Nano & Soft Materials (FUNSOM) & Collaborative Innovation Center of Suzhou Nano Science and Technology, , Suzhou, Jiangsu 215123, P. R. China
Taishan University 2 College of Physics and Electronic Engineering, , Taian, Shandong 271021, P. R. China
Chinese Academy of Sciences 3 Nano-Organic Photoelectronic Laboratory and Key Laboratory of Photochemical Conversion & Optoelectronic Materials, Technical Institute of Physics & Chemistry, , Beijing 100190, P. R. China
References (26)
Show source-provided references
1. Appl. Phys. Lett. · 1987 · 51 · 91310.1063/1.98799 ↗
2. Adv. Mater. · 2011 · 23 · 23310.1002/adma.201002636 ↗
3. Nature · 2012 · 492 · 23410.1038/nature11687 ↗
4. Appl. Phys. Lett. · 2002 · 80 · 13910.1063/1.1432110 ↗
5. Adv. Mater. · 2002 · 14 · 163310.1002/1521-4095(20021118)14:22<1633::AID-ADMA1633>3.0.CO;2-# ↗
6. Appl. Phys. Lett. · 2004 · 85 · 391110.1063/1.1812378 ↗
7. Appl. Phys. Lett. · 2006 · 89 · 25350410.1063/1.2405856 ↗
8. Appl. Phys. Lett. · 2008 · 93 · 10330410.1063/1.2979706 ↗
9. Appl. Phys. Lett. · 2009 · 94 · 13330310.1063/1.3114378 ↗
10. Adv. Funct. Mater. · 2010 · 20 · 179710.1002/adfm.201000137 ↗
11. Appl. Phys. Lett. · 2011 · 98 · 08330410.1063/1.3559847 ↗
12. Org. Electron. · 2011 · 12 · 84310.1016/j.orgel.2011.01.021 ↗
13. Phys. Stat. Sol. A · 2013 · 210 · 910.1002/pssa.201228310 ↗
14. Chem. Mater. · 2004 · 16 · 458610.1021/cm049625c ↗
15. J. Appl. Phys. · 2000 · 88 · 107310.1063/1.373779 ↗
16. Adv. Mater. · 2003 · 15 · 104310.1002/adma.200302151 ↗
17. Org. Electron. · 2009 · 10 · 93210.1016/j.orgel.2009.05.007 ↗
18. Appl. Phys. Lett. · 2010 · 96 · 19330210.1063/1.3427430 ↗
19. Adv. Mater. · 2008 · 20 · 145610.1002/adma.200701657 ↗
20. Appl. Phys. Lett. · 2012 · 101 · 01330110.1063/1.4732505 ↗
21. Appl. Phys. Lett. · 2000 · 77 · 421110.1063/1.1331640 ↗
22. Org. Electron. · 2013 · 14 · 12410.1016/j.orgel.2012.09.042 ↗
23. J. Appl. Phys. · 2011 · 109 · 04450110.1063/1.3549128 ↗
24. J. Appl. Phys. · 2012 · 112 · 01451310.1063/1.4736589 ↗
25. Appl. Phys. Lett. · 2001 · 79 · 104810.1063/1.1390479 ↗
26. J. Appl. Phys. · 2001 · 89 · 457510.1063/1.1352027 ↗