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journal article·2017-12-01Open access

Defect-related temperature dependence of THz emission from GaAs/AlGaAs MQWs grown on off- and on-axis substrates

Jessica P. C. Afalla, Alexander de los Reyes, Valynn Katrine Mag-usara, Lorenzo P. Lopez, Kohji Yamamoto, Masahiko Tani, Armando S. Somintac, Arnel A. Salvador, Elmer S. Estacio

AIP Advances· Volume 7· Issue 12
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Source abstract

Abstract

Simultaneous molecular beam epitaxial growth of GaAs/AlGaAs multiple quantum wells on two different substrates (one on GaAs (100) and another on a GaAs substrate misoriented by 4° in the (111) direction) resulted in samples of similar structure, but having different defect profiles. The on-axis sample had a higher defect density and more types of electron traps than the off-axis counterpart. Temperature-dependent terahertz (THz) emission and temperature-dependent photoluminescence were measured; in both cases, an intensity quenching was observed between 75 K – 250 K for the on-axis sample, but not in the off-axis sample. We attribute the THz emission quenching to the electron traps present in the sample, which decreases the photocarriers participating in setting up the surface field.
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Research context

OpenAlex topics: Terahertz technology and applications · Semiconductor Quantum Structures and Devices · Spectroscopy and Laser Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Research Center for Development of Far-Infrared Region, Fukui University 1 , Fukui City 910-8507, Japan

Condensed Matter Physics Laboratory, National Institute of Physics, University of the Philippines Diliman 2 , Quezon City 1101, Philippines

Funding

Department of Science and Technology Grants-In-Aid Program, Philippines · Philippine Council for Energy, Industry and Emerging Technology Research and Development · University of the Philippines Office of the Vice-Chancellor for Research and Development · Commission on Higher Education

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