Broadband light absorption of silicon nanowires embedded in Ag nano-hole arrays

Silicon nanowires (SiNWs) embedded in Ag nano-hole arrays with broadband light absorption is proposed in this paper. Finite Difference Time Domain (FDTD) simulations were utilized to obtain absorptivity and band diagrams for both SiNWs and SiNWs embedded in Ag nano-hole arrays. A direct relationship between waveguide modes and extraordinary absorptivity is established qualitatively, which helps to optimal design the structure parameters to achieve broadband absorptivity. After introducing Ag nano-hole arrays at the rear side of SiNWs, the band modes are extended into leaky regions and light energy can be fully absorbed, resulting in high absorptivity at long wavelength. Severe reflection is also suppressed by light trapping capability of SiNWs at short wavelength. Over 70% average absorptivity from 400 nm to 1100 nm is realized finally. This kinds of design give promising route for high efficiency solar cells and optical absorbers.