journal article·2016-06-01Open access

Local Peltier-effect-induced reversible metal–insulator transition in VO2 nanowires

Hidefumi Takami, Teruo Kanki, Hidekazu Tanaka

AIP Advances· Volume 6· Issue 6

Abstract

We report anomalous resistance leaps and drops in VO2 nanowires with operating current density and direction, showing reversible and nonvolatile switching. This event is associated with the metal–insulator phase transition (MIT) of local nanodomains with coexistence states of metallic and insulating phases induced by thermoelectric cooling and heating effects. Because the interface of metal and insulator domains has much different Peltier coefficient, it is possible that a significant Peltier effect would be a source of the local MIT. This operation can be realized by one-dimensional domain configuration in VO2 nanowires because one straight current path through the electronic domain-interface enables theoretical control of thermoelectric effects. This result will open a new method of reversible control of electronic states in correlated electron materials.
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Osaka University Institute of Scientific and Industrial Research, , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Funding

Japan Society for the Promotion of Science

References (26)

Show source-provided references
1. Science · 1999 · 283 · 203410.1126/science.283.5410.2034 ↗
2. Science · 2005 · 309 · 25710.1126/science.1107559 ↗
3. Science · 2007 · 318 · 175010.1126/science.1150124 ↗
4. Nature Nanotech · 2012 · 7 · 72310.1038/nnano.2012.176 ↗
5. Phys. Rev. B · 2012 · 85 · 08511110.1103/PhysRevB.85.085111 ↗
6. Nano Lett · 2014 · 14 · 239410.1021/nl500042x ↗
7. Phys. Rev. Lett. · 1959 · 3 · 3410.1103/PhysRevLett.3.34 ↗
8. J. Solid State Chem · 1971 · 3 · 49010.1016/0022-4596(71)90091-0 ↗
9. Appl. Phys. Lett. · 2010 · 96 · 21310610.1063/1.3435466 ↗
10. Phys. Rev. Lett. · 2008 · 101 · 02640410.1103/PhysRevLett.101.026404 ↗
11. Appl. Phys. Lett. · 2014 · 104 · 02310410.1063/1.4861720 ↗
12. Appl. Phys. Lett. · 2013 · 102 · 15310610.1063/1.4802207 ↗
13. Science · 2007 · 318 · 78810.1126/science.1147724 ↗
14. Phys. Rev. Lett. · 2011 · 107 · 27640110.1103/PhysRevLett.107.276401 ↗
15. Appl. Phys. Lett. · 2012 · 100 · 17311210.1063/1.4709429 ↗
16. New J. Phys. · 2004 · 6 · 5210.1088/1367-2630/6/1/052 ↗
17. Appl. Phys. Lett. · 2009 · 95 · 04350310.1063/1.3187531 ↗
18. Appl. Phys. Lett. · 2012 · 101 · 24311810.1063/1.4772211 ↗
19. Phys. Rev. Lett. · 2013 · 110 · 05660110.1103/PhysRevLett.110.056601 ↗
20. Appl. Phys. Exp. · 2014 · 7 · 02320110.7567/APEX.7.023201 ↗
21. Nano Lett. · 2009 · 9 · 400110.1021/nl902167b ↗
22. Phys. Rev. · 1969 · 185 · 102210.1103/PhysRev.185.1022 ↗
23. Nano Lett. · 2007 · 7 · 36310.1021/nl0624768 ↗
24. Appl.Phys. Lett. · 2012 · 101 · 26311110.1063/1.4773371 ↗
25. Jpn. J. Appl. Phys. · 2009 · 48 · 04550410.1143/JJAP.48.045504 ↗
26. Appl. Phys. Lett. · 2010 · 96 · 15190610.1063/1.3394016 ↗