Graphene–ZnO:N barristor on a polyethylene naphthalate substrate
Source abstract
Abstract
Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process with a maximum process temperature below 200 °C. An on/off ratio of over 104 is obtained with a 0.1 A/cm2 drive current density at Vd = 0.5 V. The transmittance, degraded by the device stack, was 2.5–3% in the visible wavelength range, and a high on/off ratio was maintained after 600 bending cycles at a 0.6% strain (bending radius = 10 mm).
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Advanced Memory and Neural Computing
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Affiliations
Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology 1 , 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
School of Materials Science and Engineering, Gwangju Institute of Science and Technology 2 , 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, South Korea
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