journal article·2014-01-01Open access

Frontside-micromachined planar piezoresistive vibration sensor: Evaluating performance in the low frequency test range

Lan Zhang, Jian Lu, Hideki Takagi, Ryutaro Maeda

AIP Advances· Volume 4· Issue 1

Abstract

Using a surface piezoresistor diffusion method and front-side only micromachining process, a planar piezoresistive vibration sensor was successfully developed with a simple structure, lower processing cost and fewer packaging difficulties. The vibration sensor had a large sector proof mass attached to a narrow flexure. Optimization of the boron diffusion piezoresistor placed on the edge of the narrow flexure greatly improved the sensitivity. Planar vibration sensors were fabricated and measured in order to analyze the effects of the sensor dimensions on performance, including the values of flexure width and the included angle of the sector. Sensitivities of fabricated planar sensors of 0.09–0.46 mV/V/g were measured up to a test frequency of 60 Hz. The sensor functioned at low voltages (<3 V) and currents (<1 mA) with a high sensitivity and low drift. At low background noise levels, the sensor had performance comparable to a commercial device.
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Research context

OpenAlex topics: Advanced MEMS and NEMS Technologies · Mechanical and Optical Resonators · Acoustic Wave Resonator Technologies

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Affiliations

National Institute of Advanced Industrial Science and Technology (AIST) Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), , Tsukuba, Ibaraki, 305-8564, Japan

References (25)

Show source-provided references
1. J. Am. Chem. Soc. · 2007 · 129 · 607010.1021/ja070788m ↗
2. Appl. Surf. Sci. · 2005 · 242 · 21210.1016/j.apsusc.2004.08.013 ↗
3. Sens. Actuators B · 1999 · 59 · 5410.1016/S0925-4005(99)00232-4 ↗
4. Sens. Actuators B · 2000 · 69 · 12710.1016/S0925-4005(00)00524-4 ↗
5. Electron. Lett. · 1993 · 29 · 39810.1049/el:19930267 ↗
6. Electron. Lett. · 1996 · 32 · 12810.1049/el:19960022 ↗
7. Proc. ASDAM · 2008 · 2008 · 327
8. Sens. Actuators A · 1995 · 48 · 10110.1016/0924-4247(94)00983-O ↗
9. IEEE Trans. Electron Devices · 1979 · ED-26 · 191110.1109/T-ED.1979.19795 ↗
10. Sens. Actuators A · 1995 · 48 · 5510.1016/0924-4247(95)00981-7 ↗
11. Compos. Struct. · 2008 · 82 · 6110.1016/j.compstruct.2006.11.012 ↗
12. IEEE Sens. J. · 2004 · 4 · 46410.1109/JSEN.2004.830301 ↗
13. Sens. Actuators A · 1998 · 65 · 6910.1016/S0924-4247(97)01638-5 ↗
14. Microelectron. Eng. · 2012 · 91 · 16710.1016/j.mee.2011.10.001 ↗
15. Ultramicroscopy · 2010 · 110 · 115410.1016/j.ultramic.2010.04.012 ↗
16. Procedia Eng. · 2010 · 5 · 106310.1016/j.proeng.2010.09.293 ↗
17. Proc. Transducers · 2011 · 2011 · 2066
18. J. Microelectromech. Syst. · 2000 · 9 · 5810.1109/84.825778 ↗
19. J. Aerosp. Eng. · 2003 · 16 · 10810.1061/(ASCE)0893-1321(2003)16:3(108) ↗
20. Jpn. J. Appl. Phys. · 2013 · 52 · 10650210.7567/JJAP.52.106502 ↗
21. Proc. MNE · 2013 · 2013 · 174
22. 2006
23. Appl. Phys. Lett. · 2001 · 78 · 144810.1063/1.1352694 ↗
24. Appl. Phys. Lett. · 1996 · 68 · 119810.1063/1.115967 ↗
25. J. Microelectromech. Syst. · 2006 · 15 · 50710.1109/JMEMS.2006.876648 ↗