Mixed phase Ge2Sb2Te5 thin films with temperature independent resistivity
Source abstract
Abstract
The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximation. By varying the volume fraction of the two phases it is possible to get films with different resistivities and temperature coefficient of resistance, changing without discontinuity from negative (fcc) to positive value (hcp). Mixed phase films with resistivity almost independent of the temperature are obtained at about 4 mΩ cm.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications
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Affiliations
Consiglio Nazionale delle Ricerche (CNR) 1 Istituto di Microelettronica e Microsistemi (IMM), , Zona Industriale VIII Strada 5, 95121, Catania, Italy
CEA-LETI, MINATEC-Campus 2 , 17, Rue des Martyrs, 38054 Grenoble Cedex 9, France
References (17)
Show source-provided references
1. J. Electrochem. Soc. · 2006 · 153 · G16410.1149/1.2146861 ↗
2. Thin Solid Films · 1998 · 332 · 41810.1016/S0040-6090(98)01042-6 ↗
3. IEEE Trans, Electr. Dev. · 2010 · 57 · 147510.1109/TED.2010.2045673 ↗
4. D. D. Coolbaugh, E. E. Eshun, R. J. Rassel, and R. M. Rassel, US patent US 7217981 B2 (2007).
5. Microelec. Eng. · 2010 · 87 · 43010.1016/j.mee.2009.08.032 ↗
6. Solid-State Elect. · 1968 · 11 · 77310.1016/0038-1101(68)90058-0 ↗
7. J. W. Ireland and J. C. Holloway, US Patent 3603768 (1971).
8. O. Le Neel, P. Dumont-Girard, C. Niu, F. Wang, and M. Arnoux, U.S. Patent US 8242876 B2 (2012).
9. S. Privitera, US Patent Application US2010/0156588 A1 (2010).
10. Nature Mat. · 2011 · 10 · 20210.1038/nmat2934 ↗
11. MRS Bullettin · 1996 · 21 · 48
12. 2001 · 36
13. J. Appl. Phys. · 2000 · 87 · 413010.1063/1.373041 ↗
14. Ann. Physik (Leipzig) · 1935 · 24 · 63610.1002/andp.19354160705 ↗
15. J. Appl. Phys. · 1952 · 23 · 77910.1063/1.1702301 ↗
16. Gibson · 1960 · 237
17. J. Appl. Phys. · 2005 · 97 · 09350910.1063/1.1884248 ↗