The vdW interactions enhance/suppress the carrier mobilities in two-dimensional GaN-BAs/SiS vdW heterostructure

The carrier mobility of two-dimensional (2D) materials can be modulated by van der Waals (vdW) interactions in conjunction with structure factors. This paper presents a comprehensive theoretical investigation of the intrinsic carrier mobilities of the flattened 2D GaN-BAs vdW heterostructure (2D GaN-BAs) and the buckled 2D GaN-SiS vdW heterostructure (2D GaN-SiS). Our numerical results reveal that 2D GaN-BAs and 2D GaN-SiS possess dispersive carrier mobilities (24–14200 cm2 V−1 s−1). Notably, compared with monolayer 2D GaN, the interlayer vdW interactions significantly enhance the carrier mobility (μ) of the flattened 2D GaN-BAs, while they substantially suppress the mobility in the buckled 2D GaN-SiS. This study provides a novel perspective on the very fundamental processes understanding the physical mechanism of carrier mobility in vdW heterostructure.