Comparative research on heavy ion irradiation effects of MOSFETs with different structures

In a complex space environment, high-energy ions can cause radiation damage effects on MOSFETs, leading to functional errors and even permanent damage. This study uses the finite element method to establish floating-body MOSFETs with bulk silicon, PDSOI, and FDSOI structures, comparing the single particle upset effects of different MOSFET structures. It examines the impact of heavy ion parameters and voltage bias on transient drain current using PDSOI MOSFETs as a research object, presenting the damage variation laws of MOSFETs in radiation environments. The results show that under heavy ion irradiation, spatial charge distributions in the three MOSFETs are similar, but there are significant differences in static potential and transient drain current. For PDSOI MOSFETs, vertically incident heavy ions cause the earliest and largest transient drain current peaks, resulting in the most severe damage. With increasing LET and penetration depth, the transient drain current pulse exhibits two peaks, and the amplitude of the second peak increases with LET and penetration depth. Increasing the drain bias voltage affects the charge collection process, resulting in a longer drain current tail.