Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
Source abstract
Abstract
We demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction. Light A is a 975-nm laser that illuminates the entire Schottky gate region at 280 μW/mm2. Light B is a 670-nm laser that locally illuminates the ungated region at 0.4 μW. When Vg = 0 V, Light B doubles ISG for Light A. At Vg = 87 mV, ISG is generated only when both Light A and B are irradiated simultaneously, like the logical operation A∩B. When Vg = 165 mV, ISG is induced only for the illumination of Light A alone, like A∩B̄.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
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Affiliations
National Institute for Materials Science , 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047,
References (22)
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