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journal article·2024-09-01Open access

Low dark current Sb-based short-wavelength infrared photodetector

Mingming Li, Yifan Cheng, Xiangyu Zhang, Ye Zhang, Dongwei Jiang, Zhigang Song, Wanhua Zheng

AIP Advances· Volume 14· Issue 9
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Source abstract

Abstract

We have theoretically and experimentally demonstrated the feasibility of achieving ultra-low dark current in CpBnn type detectors based on a double-barrier InAs/GaSb/AlSb type-II superlattice. By employing a structure that separates the absorption region and depletion region, the diffusion, recombination, tunneling, and surface dark currents of the photodetector (PD) have been suppressed. Experimental validation has shown that a detector with a diameter of 500 µm at a bias voltage of −0.5 V exhibits a dark current density of 2.5 × 10−6 A/cm2 at the operating temperature of 300 K. The development of PD with low dark current has paved the way for applications with high demands for low noise in the fields of gravitational wave detection and astronomical observation.
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Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Spectroscopy and Laser Applications · Optical and Acousto-Optic Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing, China

Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 2 , Beijing 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 3 , Beijing 100049, China

Funding

National Key Research and Development Program of China · National Key Technologies R&D Program of China · Major Program of the National Natural Science Foundation of China · The Young Scientists Fund of National Natural Science Foundation of China · The State Key Laboratory of Special Rare Metal Materials

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