Optimization of effective electron mass in strained silicon nanosheets
Source abstract
Abstract
This work investigated the effective mass of electrons in silicon nanosheets confined in the [001] and [1̄10] directions and having thicknesses of several nanometers with uniaxial tensile stress in the [110] direction, using density functional theory. The results show that the confinement along [1̄10] substantially reduces the effective mass in the [110] direction even in the absence of stress—a phenomenon not observed under [100] confinement. Our theoretical analysis reveals that confinement in the [110] direction acts as an effective shear strain. Furthermore, our study identifies an optimal stress that minimizes the effective mass in the transport direction, m110, thereby improving the nanosheet’s transport properties.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research Center for Emerging Computing Technologies, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568, Japan
Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 2 , Tsukuba, Ibaraki 305-8569, Japan
Funding
New Energy and Industrial Technology Development Organization
References (29)
Show source-provided references
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