Demonstration of gallium oxide nano-pillar field emitter arrays
Source abstract
Abstract
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USA
NanoSystems Laboratory, Department of Physics, The Ohio State University 2 , Columbus, Ohio 43210, USA
Materials and Manufacturing Directorate, Air Force Research Laboratory 3 , 2179 12th Street, B652/R122WPAFB, Ohio 45433-7718, USA
UES 4 , 2179 12th St., Wright-Patterson Air Force Base, Dayton, Ohio 45433, USA
Department of Materials Science and Engineering, The Ohio State University 5 , Columbus, Ohio 43210, USA
Funding
Air Force Office of Scientific Research · Air Force Research Laboratory
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