Photoelectrically detected magnetic resonance on sulfur doped NV centers

The compatibility of the method of photoelectrically detected magnetic resonance with the technique of nitrogen vacancy (NV) yield enhancement by sulfur doping has been demonstrated. For this purpose, ensembles of nitrogen vacancy centers of different area densities were generated in undoped, medium doped, and heavily doped areas of a diamond sample. The implantation depths for the dopants and the nitrogen atoms were matched in advance using the Monte Carlo simulation program “Stopping and Range of Ions in Matter.” A comparison of the pulsed photoelectrically detected magnetic resonance spectra of the NV ensembles also revealed a moderate enhancement of the signal to noise ratio for the doped areas. A connection with the increase of the NV− to NV0 ratio in the doped areas observed in optical measurements is suggested by us.