journal article·2023-02-01Open access

Novel multi-bit parallel pipeline-circuit design for STT-MRAM

Guangjun Zhang, Yanfeng Jiang

AIP Advances· Volume 13· Issue 2

Abstract

In the paper, novel multi-bit parallel pipeline circuit design of STT-MRAM is proposed to improve the read and write efficiency. The shift register is utilized to change the series data into the parallel ones. Combined with the corresponding sense amplifier (SA) circuit and the write drive circuit, 4-bit data can be read or written in parallel in single cycle. With the 32 Kbit data test, the efficiencies of the read and the write operations of the proposed pipeline circuit are increased by 72.3% and 74.4%, separately, with the comparison of the incumbent series operations. The proposed strategy has potential application in the embedded high speed STT-MRAM.
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Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Magnetic properties of thin films · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering, School of Internet of Things (IoTs), Institute of Advanced Technology, Jiangnan University , Wuxi 214122, China

Funding

National Natural Science Foundation of China

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