Conductive transparent (InGa)2O3 film as host for rare earth Eu

We have investigated the optical and electrical properties of (InGa)2O3:Eu films. We have demonstrated the obtained (InGa)2O3:Eu films have conductive transparent properties, and they can be used as a host for rare earth Eu. The (InGa)2O3:Eu films are of a (111) oriented cubic structure, as revealed by both x-ray diffraction and Raman spectroscopy measurements. The (InGa)2O3:Eu films show high transmittance of over 70% in the visible wavelength range and low resistivity ranging from 2.8 × 10−3 Ω cm to 2.1 × 10−2 Ω cm, depending on the Ga content. The intensity of main Eu3+ emission peaks upon excitation at 488 nm at room temperature increased with an increase in the Ga content. The enlarged bandgap as well as the decreased local symmetry of the cubic structure should be responsible for the enhanced Eu3+ emission. The results suggested that (InGa)2O3:Eu films can be very good candidates for light-emitting devices that can be driven electrically.