Transient current technique for charged traps detection in silicon bonded interfaces

J. Bronuzzi; D. Bouvet; C. Charrier; F. Fournel; M. F. García; A. Mapelli; M. Moll; E. Rouchouze; J. M. Sallese

doi:10.1063/1.5079999

journal article·2019-02-01Open access

Transient current technique for charged traps detection in silicon bonded interfaces

J. Bronuzzi, D. Bouvet, C. Charrier, F. Fournel, M. F. García, A. Mapelli, M. Moll, E. Rouchouze, J. M. Sallese

AIP Advances· Volume 9· Issue 2

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Source abstract

Abstract

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabrication of monolithic radiation sensors. Such techniques allow the joining of various absorbers on the backside of thinned CMOS circuity without intermediate layers or through vias. This paper presents a method for the electrical characterization of such bonded interfaces based on the Transient Current Technique (TCT). This method can be extended to the investigation of any type of solid-state devices.

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Research context

OpenAlex topics: Radiation Effects in Electronics · Electrostatic Discharge in Electronics · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Experimental Physics Department, European Organization for Nuclear Research (CERN) 1 , Route de Meyrin 385, 1217 Meyrin, Switzerland

Group of Electronics Device Modeling and Technology, École Polytechnique Fédérale de Lausanne (EPFL) 2 , Rue Cantonale, 1015 Lausanne, Switzerland

Centre de Micronanotechnology, École Polytechnique Fédérale de Lausanne (EPFL) 3 , Rue Cantonale, 1015 Lausanne, Switzerland

Univ. Grenoble Alpes, CEA, LETI 4 , F-38000 Grenoble, France

Instituto de Fisica de Cantabria-CSIC -Univesidad de Cantabria 5 , Avda. Los Castros S/N, 39005 Santander, Spain

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