Effects of La-doping on piezoelectricity properties of 0.15BiInO3-0.85PbTiO3 thin films deposited by RF magnetron sputtering method

La-doped 0.15BiInO3-0.85PbTiO3 thin films are deposited on SRO/Pt/MgO substrates by RF-magnetron sputtering method. The structures of the thin films are characterized by XRD and AFM. Meanwhile, the effects of La doping concentrations on the piezoelectricity of the films are measured. At the same time, the transverse piezoelectric coefficients of the films are simulated by COMSOL combined with CASTEP calculations. The simulated results are in agreement with the experimental data, which show that the La-doping 0.15BiInO3-0.85PbTiO3 films have optimized properties by properly controlling the La doping compositions. It is found that the effective transverse piezoelectric coefficients have a maximum of -9.35 C/m2 as 3 mol.% La-doping 0.15BiInO3-0.85PbTiO3 films.