Simulation study of a fast speed trench Schottky rectifier with an isolated gate
Source abstract
Abstract
A novel trench Schottky rectifier with an isolated gate (IG-TSR) is proposed and investigated by simulation. It features an isolation of a trench MOS poly-gate from an anode metal in a conventional trench MOS barrier Schottky (TMBS) rectifier. In the proposed fabrication process, the isolation can be created by modifying the layout pattern without any additional process step or manufacturing cost. Because of the isolation of the trench MOS poly-gate from the anode metal, the capacitance between the cathode and the anode (Cds) of the proposed IG-TSR decreases significantly, which results in a fast switching performance. According to the simulation results, IG-TSR holds a 17.4% reduction in reverse recovery time (Trr) and a 22.1% reduction in reverse recovery peak current (Irm) compared with TMBS, and other related forward and reverse performances are basically unchanged. Therefore, the proposed IG-TSR is a competitive device for high frequency and high efficiency applications in power systems.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Materials and Semiconductor Technologies · Silicon Carbide Semiconductor Technologies · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Electronic Engineering, China Academy of Engineering Physics 1 , Mianyang, China
School of Electrical Engineering, Chongqing University 2 , Chongqing, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Chongqing Municipality
References (14)
Show source-provided references
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