Origin of extra diffraction spots for high crystalline alpha-Ga2O3
Source abstract
Abstract
This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University 1 , Seoul 08826, Republic of Korea
Advanced Institute of Convergence Technology, Seoul National University 2 , Suwon 16229, Republic of Korea
Department of Physics, Gachon University 3 , Seougnam Gyeonggi-do 13120, Republic of Korea
Funding
National Research Foundation of Korea · Samsung
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