Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation
Source abstract
Abstract
The effects of displacement damage due to 1 MeV electron radiation on 680 nm and 850 nm vertical-cavity surface-emitting lasers (VCSELs) were experimentally investigated. The displacement damage dose was calculated using the MULASSIS tool, where it was found that radiation significantly affects the threshold current of VCSELs. The threshold current damage factor is 2.46 × 10−18 cm2/e for 680 nm VCSELs and 1.48 × 10−18 cm2/e for 850 nm VCSELs. In addition, the power intensity distribution and light output power degradation were characterized to evaluate the radiation hardness of VCSELs. An understanding of the performance degradation of VCSELs under electron exposure would be useful in optimizing their applications in hostile environments.
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Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences 1 , No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
University of Chinese Academy of Sciences 2 , No. 19-A Yuquan Road, Shijingshan District, Beijing 100049, People’s Republic of China
Funding
West Light Foundation of the Chinese Academy of Sciences · National Natural Science Foundation of China
References (16)
Show source-provided references
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