journal article·2020-08-01Open access

Equilibrium current density balancing two atomic flows in coupled problems of electromigration and thermomigration in unpassivated gold film

Yasuhiro Kimura, Yang Ju

AIP Advances· Volume 10· Issue 8

Abstract

This work studies the coupled problems of electromigration (EM)- and thermomigration (TM)-induced anomalous atomic flows through experiments for demonstrating EM and TM tests and the theoretical formulation describing the atomic behavior. A two-dimensional unpassivated Au interconnect, having a protrusion nose area where atoms are accumulated, was used for observing hillock formation under current stressing and heating of the substrates. The hillock formation locations depend on the experimental conditions, including current density and temperature involved with the driving forces of EM and TM. The relationship between coupling the EM- and TM-induced driving forces was clarified through the experimental observation of the hillock formation location and the proposition of the equilibrium current density. Considering the magnitude relationship of the EM- and TM-induced driving forces, it was proved that an equilibrium current density, below or above which EM or TM is dominant, respectively, exists. The theoretical equilibrium current density was formulated to estimate the equilibrium state of EM and TM, deducing the behavior of hillock formations by EM and TM. Hillocks form at the nose edge due to EM-induced forward flow in the case of lower current density and higher temperature. Conversely, hillocks form at an area slightly away from the nose end due to TM-induced backward flow in the case of higher current density and lower temperature.
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Research context

OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Finemechanics, Graduate School of Engineering, Tohoku University 1 , Aoba 6-6-01, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Department of Micro-Nano Mechanical Science and Engineering, Nagoya University 2 , Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funding

Japan Society for the Promotion of Science

References (52)

Show source-provided references
1. Appl. Phys. Lett. · 2000 · 76 · 98810.1063/1.125915 ↗
2. J. Appl. Phys. · 2003 · 94 · 545110.1063/1.1611263 ↗
3. IEEE Trans. Device Mater. Reliab. · 2005 · 5 · 19810.1109/tdmr.2005.846830 ↗
4. Mater. Sci. Eng. R: Rep. · 2007 · 58 · 110.1016/j.mser.2007.04.002 ↗
5. J. Appl. Phys. · 1962 · 33 · 63410.1063/1.1702479 ↗
6. Phys. Rev. Appl. · 2018 · 10 · 05405210.1103/physrevapplied.10.054052 ↗
7. Appl. Phys. Lett. · 2003 · 82 · 104510.1063/1.1554775 ↗
8. J. Electron. Packag. · 2009 · 131 · 01100210.1115/1.3068296 ↗
9. Int. J. Damage Mech. · 2014 · 23 · 20310.1177/1056789513488396 ↗
10. J. Appl. Phys. · 1976 · 47 · 120310.1063/1.322842 ↗
11. Microsyst. Technol. · 2017 · 23 · 452310.1007/s00542-016-3178-7 ↗
12. J. Vac. Sci. Technol., A · 1983 · 1 · 45510.1116/1.571946 ↗
13. Mater. Lett. · 2016 · 184 · 21910.1016/j.matlet.2016.08.059 ↗
14. J. Electron. Packag. · 2019 · 141 · 02100810.1115/1.4042980 ↗
15. Mech. Res. Commun. · 1995 · 22 · 47310.1016/0093-6413(95)00051-r ↗
16. Int. J. Heat Mass Transfer · 2012 · 55 · 609010.1016/j.ijheatmasstransfer.2012.06.022 ↗
17. J. Appl. Phys. · 1993 · 73 · 379010.1063/1.354073 ↗
18. J. Phys. D: Appl. Phys. · 2016 · 49 · 20LT0110.1088/0022-3727/49/20/20lt01 ↗
19. J. Appl. Phys. · 2018 · 124 · 18510210.1063/1.5045086 ↗
20. Appl. Phys. Lett. · 1971 · 18 · 37310.1063/1.1653704 ↗
21. J. Phys. Chem. Solids · 1972 · 33 · 84510.1016/s0022-3697(72)80101-x ↗
22. J. Appl. Phys. · 1975 · 46 · 57910.1063/1.321662 ↗
23. Thin Solid Films · 1977 · 46 · 13910.1016/0040-6090(77)90056-6 ↗
24. Jpn. J. Appl. Phys., Part 1 · 2016 · 55 · 06GH0110.7567/jjap.55.06gh01 ↗
25. Acta Mater. · 2018 · 157 · 27610.1016/j.actamat.2018.07.026 ↗
26. Appl. Phys. Lett. · 2020 · 116 · 02410210.1063/1.5131710 ↗
27. Appl. Phys. Lett. · 2005 · 86 · 04310910.1063/1.1857095 ↗
28. Nano Lett. · 2006 · 6 · 44110.1021/nl052302a ↗
29. Nano Lett. · 2007 · 7 · 277410.1021/nl0713169 ↗
30. Nanoscale Res. Lett. · 2012 · 7 · 11310.1186/1556-276x-7-113 ↗
31. J. Mater. Res. · 2005 · 20 · 271210.1557/jmr.2005.0340 ↗
32. Mater. Lett. · 2006 · 60 · 212910.1016/j.matlet.2005.12.107 ↗
33. Nat. Commun. · 2019 · 10 · 447810.1038/s41467-019-12416-x ↗
34. J. Phys. Chem. Solids · 1961 · 20 · 7610.1016/0022-3697(61)90138-x ↗
35. 1973 · 30
36. Appl. Phys. Lett. · 1976 · 29 · 13110.1063/1.89024 ↗
37. Acta Mater. · 2018 · 153 · 37710.1016/j.actamat.2018.04.019 ↗
38. Phys. Rev. B · 1992 · 45 · 140910.1103/physrevb.45.1409 ↗
39. J. Phys.: Conf. Ser. · 2016 · 710 · 01204410.1088/1742-6596/710/1/012044 ↗
40. J. Phys. D: Appl. Phys. · 1986 · 19 · 125710.1088/0022-3727/19/7/015 ↗
41. Phys. Rev. B · 1970 · 2 · 306010.1103/physrevb.2.3060 ↗
42. 1970
43. J. Appl. Phys. · 1972 · 43 · 247310.1063/1.1661534 ↗
44. J. Phys. F: Met. Phys. · 1973 · 3 · 69110.1088/0305-4608/3/4/010 ↗
45. J. Appl. Phys. · 1973 · 44 · 297510.1063/1.1662692 ↗
46. Thin Solid Films · 1975 · 25 · 32710.1016/0040-6090(75)90052-8 ↗
47. J. Appl. Phys. · 1977 · 48 · 3610.1063/1.323336 ↗
48. J. Phys.: Condens. Matter · 1993 · 5 · A40510.1088/0953-8984/5/33a/152 ↗
49. 1994-1995
50. J. Appl. Phys. · 1993 · 73 · 446210.1063/1.352785 ↗
51. 1987
52. 2001