Low loss and dispersion engineered ZnSe waveguides at telecom wavelengths
Source abstract
Abstract
We have successfully fabricated a dispersion engineered ZnSe waveguide. The ZnSe film was deposited on a CaF2 substrate by radio frequency magnetron sputtering, and the waveguide was patterned directly on the ZnSe films by UV lithography and inductively coupled plasma etching. The nonlinear coefficient in the 4-μm-width waveguide was calculated to be 0.73 w−1 m−1 for both TE and TM modes at 1.55 µm. The loss of the ZnSe rib waveguides was measured to be 4.3 dB/cm at 1550 nm using the cut-back method.
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Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Fiber Laser Technologies · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The Research Institute of Advanced Technologies, Ningbo University 1 , Ningbo 315211, China
Laser Physics Centre, The Australian National University 2 , Acton 2000, Canberra, Australia
Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology 3 , Hubei 430070, China
Funding
State Key Laboratory of Silicate Materials for Architectures · National Natural Science Foundation of China · 3315 Innovation Team in Ningbo City
References (21)
Show source-provided references
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