Effect of different buffer layers on the quality of InGaN layers grown on Si
Source abstract
Abstract
This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Independent Researcher 1 , 28039 Madrid, Spain
ETSIT-ISOM, Universidad Politécnica de Madrid 2 , Avda. Complutense 30, 28040 Madrid, Spain
Grupo de Ingeniería Fotónica, Universidad de Alcalá, Departamento de Electrónica 3 , Alcalá de Henares, 28801 Madrid, Spain
Grupo de Física de Materiales Complejos, Departamento de Física de Materiales & Instituto Pluridisciplinar, Universidad Complutense de Madrid 4 , 28040 Madrid, Spain
Funding
Secretaría de Estado de Investigación, Desarrollo e Innovación · H2020 European Research Council
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