Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption

We present an experimental approach toward the realization of GaAs nanowires in the form of square, hexagonal, and honeycomb lattices for photonic integration toward enhanced optical properties. We have carried out a design and fabrication process on GaAs wafers using electron beam lithography patterning, reactive ion etching for hard mask removal, and inductively coupled plasma etching of the material. The resulting photonic crystals are analyzed by field emission scanning electron microscopy. Nanowire array designs in a square, hexagonal, and honeycomb lattice with a variable height of nanowires have been studied. Using finite-difference time-domain simulation, we can derive the comparative optical absorption properties of these nanowire arrays. A very high broadband absorbance of >94% over the 400 nm–1000 nm wavelength range is studied for hexagonal and honeycomb arrays, while a square lattice array shows only a maximum of 85% absorption. We report a minimum of 2% reflectance, or 98% optical absorbance, over 450 nm–700 nm and over a wide angle of 45° through hexagonal and honeycomb lattice integration in GaAs. These results will have potential applications toward broadband optical absorption or light trapping in solar energy harvesting.