journal article·2020-09-01Open access

Ion-beam induced luminescence and optical response measurement setup at IGCAR: First experimental results

S. K. Srivastava, P. Gangopadhyay, S. Chinnathambi, P. Magudapathy

AIP Advances· Volume 10· Issue 9

Abstract

A multipurpose novel experimental setup has been developed for the in situ measurements of ion-beam induced luminescence, optical response, and time-resolved photoluminescence spectroscopy of materials. A low-energy ion accelerator (terminal voltage of 150 kV) has been coupled with the spectrometer for the experiments. Measurements show a drastic increase in the luminescence intensity at 425 nm with the maximum fluence of 120 keV He+ ion irradiation on pure monoclinic ZrO2 samples. The maximum luminescence intensity is found to increase systematically with the ion fluences. An excess of oxygen defects in irradiated ZrO2 samples is thought to be the reason for the increase in the luminescence intensity. In addition, the He+ ion-beam induced increase in optical responses at 425 nm in Ag+ ion-exchanged soda glass samples, for example, has been observed on ion irradiation. The unique in situ experimental setup demonstrates and opens new opportunities to study irradiation controllable defects in materials and ion-beam induced optical responses in glass samples.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ion-surface interactions and analysis · Glass properties and applications · Luminescence Properties of Advanced Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Materials Science Group, Indira Gandhi Centre for Atomic Research , Kalpakkam 603102, Tamilnadu, India

References (21)

Show source-provided references
1. 2007
2. Two stages in the kinetics of gold cluster growth in ion-implanted silica during isothermal annealing in oxidizing atmosphere10.1063/1.1506423 ↗
3. Raman scattering studies of cobalt nanoclusters formed during high energy implantation of cobalt ions in a silica matrix10.1063/1.2434158 ↗
4. Ion-beam sputtering and nanostructures of noble metals10.1016/j.vacuum.2010.01.013 ↗
5. Effects of high-energy Si ion-irradiations on optical responses of Ag metal nanoparticles in a SiO2 matrix10.1016/j.cplett.2014.05.059 ↗
6. Alloying of metal nanoparticles by ion-beam induced sputtering10.1016/j.cplett.2016.11.041 ↗
7. Ag nanoparticles in compound metal oxide semiconductors: Syntheses and characterizations10.1016/j.tsf.2019.04.039 ↗
8. High energy ion irradiation induced surface patterning on a SiO2 glass substrate10.1016/j.nimb.2014.08.003 ↗
9. Photoluminescence investigation of defects and optical band gap in multiferroic BiFeO3 single crystals10.1143/apex.5.035802 ↗
10. In situ optical absorption studies of point defect kinetics and thermodynamics in oxide thin films10.1002/admi.201900496 ↗
11. An ideal system for analysis and interpretation of ion beam induced luminescence10.1016/j.phpro.2015.05.043 ↗
12. Ionoluminescence study of Zn− and O− implanted ZnO crystals: An additional perspective10.1016/j.apsusc.2016.02.174 ↗
13. New ion beam materials laboratory for materials modification and irradiation effects research10.1016/j.nimb.2014.07.028 ↗
14. In-situ luminescence studies of silica glass during low energy H+, He+ and O+ irradiation10.1016/j.surfcoat.2018.05.008 ↗
15. Radiation tolerance of nanocrystalline ceramics: Insights from yttria stabilized zirconia10.1038/srep07746 ↗
16. A Monte Carlo computer program for the transport of energetic ions in amorphous targets10.1016/0029-554x(80)90440-1 ↗
17. Thermoluminescence and photoluminescence of ZrO2 nanoparticles10.1016/j.radphyschem.2011.03.023 ↗
18. Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation10.1039/c9nr08390a ↗
19. Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals10.1016/j.jallcom.2013.11.016 ↗
20. Electrical transport studies of Ag nanoclusters embedded in glass matrix10.1016/S0921-4526(00)00580-9 ↗
21. 1995