High Curie temperature in Eu-doped GaN caused by volume-compensated Ga-vacancy
Abstract
Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
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Affiliations
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University 1 , Toyonaka, Osaka 560-8531, Japan
Research Institute of Electrical Communication, Tohoku University 2 , Sendai 980-8577, Japan
The Institute of Solid State Physics, The University of Tokyo 3 , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
Graduate School of Engineering, Osaka University 4 , 2-1 Yamadaoka, Suita 565-0871, Japan
Center for Spintronics Research Network, Graduate School of Engineering 5 , , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
The University of Tokyo 5 , , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Funding
Japan Society for the Promotion of Science · Core Research for Evolutional Science and Technology