An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process
Source abstract
Abstract
A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Phase-change materials and chalcogenides
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Affiliations
Osaka University 1 Research Center for Ultra-High Voltage Electron Microscopy, , 7-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Osaka University 2 Division of Materials and Manufacturing Science, Graduate School of Engineering, , 2-1, Yamada-Oka, Suita, Osaka 565-0871, Japan
Korea Institute of Materials Science 3 Powder & Ceramics Division, , 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101, Korea
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25. See supplementary material at http://dx.doi.org/10.1063/1.4936629 for Sec. 1 the annealing of the Pd/SiOxspecimen without irradiation” and Sec. 2 “the annealing of an amorphous phase in Pd/SiOx specimen obtained by the irradiation induced structural change.