Fabrication of GaN single crystals at 700°C using Na-Li-Ca mixed flux system
Source abstract
Abstract
GaN single crystals were grown in Na-Li-Ca flux system of which Li-Ca gradually replaces Na. X-ray powder diffraction analysis confirmed that the structure of GaN samples was wurtzite. As concentration of Li-Ca in flux increased, the shape of GaN crystals was changed from pyramidal, prism to platelets in sequence, and the color of them became transparent gradually. Among of them, the transparent prism crystals were grown first at 700°C when the concentration of Li-Ca was 31.6 mol% and 48.9 mol% in flux solution, respectively. Raman spectra implied that these crystals were stress-free and the transparent crystal grown in the high concentration of Li-Ca solution had high structural quality or low impurity concentrations.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering, Xi’an Jiaotong University , Xi’an 710049, China
Funding
The International Science and Technology cooperation program of China · The National Basic Research Program of China · National Natural Science Foundation of China
References (26)
Show source-provided references
1. Ieice Electronics Express · 2013 · 10 · 110.1587/elex.10.20132005 ↗
2. Appl. Phys. Lett. · 1994 · 64 · 168710.1063/1.111832 ↗
3. Proc. IEEE · 2010 · 98 · 130210.1109/jproc.2010.2044967 ↗
4. Proc. IEEE · 2010 · 98 · 132410.1109/jproc.2009.2030699 ↗
5. J. Cryst. Growth · 1984 · 66 · 110.1016/0022-0248(84)90070-8 ↗
6. J. Mater. Sci. · 2000 · 35 · 80110.1023/a:1004713400790 ↗
7. Chem. Mat. · 1997 · 9 · 41310.1021/cm960494s ↗
8. J. Cryst. Growth · 2008 · 310 · 394610.1016/j.jcrysgro.2008.06.008 ↗
9. Cryst. Growth Des. · 2012 · 12 · 379910.1021/cg300643r ↗
10. J. Cryst. Growth · 2015 · 427 · 8710.1016/j.jcrysgro.2015.07.001 ↗
11. Appl. Phys. Express · 2014 · 710.7567/apex.7.035503 ↗
12. J. Cryst. Growth · 2005 · 284 · 9110.1016/j.jcrysgro.2005.06.034 ↗
13. Jpn. J. Appl. Phys. Part 2-Lett. · 2003 · 42 · 56510.1143/jjap.42.l565 ↗
14. Gallium Nitride Materials and Devices Vi · 2011 · 7939 · 79392A10.1117/12.875824 ↗
15. J. Electron. Mater. · 2017 · 47 · 156910.1007/s11664-017-5970-2 ↗
16. Physica Status Solidi C: Current Topics in Solid State Physics · 2012 · 9 · 45710.1002/pssc.201100309 ↗
17. Journal Of Chemical Physics · 1963 · 38 · 187310.1063/1.1733889 ↗
18. J. Electron. Mater. · 2014 · 43 · 121910.1007/s11664-014-2996-6 ↗
19. Appl. Phys. Express · 2012 · 510.1143/apex.5.025503 ↗
20. 1973
21. Physica Status Solidi C: Current Topics in Solid State Physics · 2011 · 8 · 144510.1002/pssc.201000911 ↗
22. Gallium Nitride Materials and Devices Vi · 2011 · 7939
23. J. Mater. Sci.-Mater. Electron. · 2005 · 16 · 2910.1007/s10854-005-4955-8 ↗
24. Effect of pressure on optical phonon modes and transverse effective charges inGaNandAlN10.1103/physrevb.64.035205 ↗
25. Phys. Rev. B · 1992 · 45 · 8310.1103/physrevb.45.83 ↗
26. J. Cryst. Growth · 2008 · 310 · 393410.1016/j.jcrysgro.2008.06.037 ↗