Crystal structure induced residue formation on 4H-SiC by reactive ion etching

The (0001¯) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as {11¯02¯} crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed.