Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Source abstract
Abstract
This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026, Anhui, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123, Jiangsu, China
Suzhou Nanowin Science and Technology Co, Ltd. 3 , Suzhou 215123, Jiangsu, China
Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors 4 , Suzhou 215123, Jiangsu, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Key Research and Development Program of Jiangsu Province
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Show source-provided references
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