Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer
Source abstract
Abstract
The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron, and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric field position shifts from the edge of gate to the edge of drain. During the process of peak electric field transfer, the gate electric field gradually saturates, and the increase rate of peak electric field shows a turning point at 350 V (Vd < 600 V). As the voltage further increases (Vd > 600 V), the increase rate of the drain electric field gradually slows down and tends to saturation, and the corresponding saturated gate electric field begins to increase. The uniform, quasi-linear, and step distributions of three different C acceptor in the buffer layer exhibit different degrees of current collapse under 1 ms bias stress, with values of 21.8%, 12.7%, and 12.8%, respectively. In this work, we have provided appropriate explanations for the above phenomena.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026, Anhui, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123, Jiangsu, China
Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors 3 , Suzhou 215123, Jiangsu, China
Suzhou Nanowin Science and Technology Co, Ltd. 4 , Suzhou 215123, Jiangsu, China
Funding
The National Key R&D Program of China · The National Nature Science Foundation of China · The Suzhou Science and Technology Plan Project
References (22)
Show source-provided references
1. GaN power switches on the rise: Demonstrated benefits and unrealized potentials10.1063/1.5133718 ↗
2. Study of AlGaN/GaN vertical super junction HEMT for improvement of breakdown voltage and specific on-resistance10.1109/access.2021.3049374 ↗
3. Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures10.1063/5.0045910 ↗
4. Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs10.35848/1347-4065/abdb82 ↗
5. High-performance normally-off operation p-GaN gate HEMT on free-standing GaN substrate10.1109/ted.2022.3193991 ↗
6. Recent advances in GaN-based power HEMT devices10.1002/aelm.202001045 ↗
7. Enhancement of DC and breakdown performance on single to multi-step gate FP using GaN-HEMT for high power applications10.1007/s12633-020-00503-4 ↗
8. Improved X-band performance and reliability of a GaN HEMT with sunken source connected field plate design10.1109/led.2022.3146194 ↗
9. Electric field reduction in C-doped AlGaN/GaN on Si high electron mobility transistors10.1109/led.2015.2442293 ↗
10. Design of GaN/AlGaN/GaN super-heterojunction Schottky diode10.1109/TED.2019.2953843 ↗
11. Narayanan GaN-based super heterojunction field effect transistors using the polarization junction concept10.1109/led.2011.2105242 ↗
12. Unlimited high breakdown voltage by natural super junction of polarized semiconductor10.1109/led.2008.2002753 ↗
13. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap10.7567/apex.11.034102 ↗
14. Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal10.1109/LED.2010.2089493 ↗
15. Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination10.1063/5.0082377 ↗
16. Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates10.1109/TED.2021.3126270 ↗
17. Gate injection transistor (GIT)—A normally-of AlGaN/GaN power transistor using conductivity modulation10.1109/ted.2007.908601 ↗
18. Hot-electron trapping and hole-induced detrapping in GaN-based GITs and HD-GITs10.1109/TED.2018.2877905 ↗
19. Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor10.1063/1.4934184 ↗
20. High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
21. Origin of soft breakdown in thin-barrier AlGaN/GaN SBD with C-doped GaN buffer10.1109/TED.2022.3227223 ↗
22. Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers10.1109/TED.2018.2828410 ↗