Photoluminescence evidence for silicon Frenkel defects in electron irradiated 4H SiC
Source abstract
Abstract
The nature of defects in 4H SiC was studied by means of low temperature photoluminescence before and after energy-controlled electron irradiation. Analysis of experimental data from irradiation at energies above and below the Si displacement energy together with subsequent annealing leads to the conclusion that Si Frenkel defects have been detected experimentally in this material. Reasons why these are formed in some cases rather than carbon vacancy carbon antisite pairs are explored.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics, University of Bristol , Bristol BS8 1TL, United Kingdom
References (20)
Show source-provided references
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