Effect of window layer with different growth modes on the photoelectric properties of AlGaInP LED
Source abstract
Abstract
The AlGaInP window layers with different growth modes of Al in (AlxGa1−x)0.5In0.5P were prepared to investigate the effect of different growth modes of Al on the photoelectric properties of red LEDs. The experimental results show that the forward voltage of (AlxGa1−x)0.5In0.5P LEDs n-window layer with the ridge gradient Al content was 30 mV (x = 0.15) and 190 mV (x = 0.45), respectively, which are lower than that of the n-window layer without ridge gradient Al content samples. Meanwhile, the light output power of the ridge gradient Al content LED is 12.3% (x = 0.15) and 3.6% (x = 0.45) higher than that of the other two samples, respectively. Compared with the Al composition ridge gradient sample, the photoelectric efficiency is 2.45% (x = 0.15) and 5.68% (x = 0.45), respectively, due to the reduction in the voltage and the increase in the light output power.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Optoelectronic, Xiamen University of Technology 1 , Xiamen, Fujian 361024, China
Xiamen Silan Advanced Compound Semiconductor Co. Ltd. 2 , Xiamen, Fujian 361026, China
Funding
Fujian Provincial Department of Science and Technology
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