Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices
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Affiliations
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering and Technology, Fudan University 1 , Shanghai 200433, China
Shanghai Research Center for Silicon Carbide Power Devices Engineering and Technology, Fudan University 2 , Shanghai 200433, China
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 3 , Beijing 100871, People’s Republic of China
Collaborative Innovation Center of Quantum Matter 4 , Beijing 100871, People’s Republic of China
Funding
Key Research and Development Program of Guangdong Province · National Key Research and Development Program of China · National Natural Science Foundation of China · China Postdoctoral Science Foundation